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Title: A current modulation in the Gd{sub 2}O{sub 3}/Si/Gd{sub 2}O{sub 3} quantum well structure as a mean to monitor oxygen vacancies

The Gd{sub 2}O{sub 3} layer grown by electron beam evaporation system normally leads to oxygen deficient sites unless the oxygen partial pressure is provided. These oxygen vacancies were monitored through their current modulating effect. This modulation controlled the current within a Si well of the Gd{sub 2}O{sub 3}/Si/Gd{sub 2}O{sub 3} quantum well structure through the migration of the oxygen vacancies. Such behavior were not found in the structure that contains far less oxygen vacancy such as SiO{sub 2}/Si/SiO{sub 2} structure.
Authors:
 [1] ; ;  [2]
  1. Department of Physics and Optical Science, UNC-Charlotte, Charlotte, NC 28223 (United States)
  2. Electrical and Computer Engineering Department, UNC-Charlotte, Charlotte, NC 28223 (United States)
Publication Date:
OSTI Identifier:
22280294
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1598; Journal Issue: 1; Conference: LDSD 2011: 7. international conference on low dimensional structures and devices, Telchac (Mexico), 22-27 May 2011; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; CRYSTAL GROWTH; ELECTRIC CURRENTS; ELECTRON BEAMS; ENERGY BEAM DEPOSITION; GADOLINIUM OXIDES; HETEROJUNCTIONS; LAYERS; MODULATION; OXYGEN; PARTIAL PRESSURE; QUANTUM WELLS; SILICON; SILICON OXIDES; VACANCIES