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Title: Sensitivity of absorption spectra to surface segregation in InGaN/GaN quantum well structures

We investigate the influence of the indium surface segregation on absorption spectra in InGaN/GaN quantum well structures having different indium amount. Results of the mathematical modeling show that such influence is more pronounced in quantum well structures with high indium amounts. The origin of this effect is related to the interplay between the indium surface segregation and internal electrostatic fields. Our theoretical analysis is performed using semiconductor Bloch equations within the Hartree-Fock approximation including into consideration excitonic effects. Results of the global sensitivity analysis evidence that the influence of the indium surface segregation is less than one order of magnitude in comparison with the impact of the quantum-well width and indium molar fraction. Also, the influence of the indium surface segregation is not the same for each interface of the quantum well.
Authors:
;  [1] ;  [2]
  1. Lab. Photonics, Kharkov National University of Radio Electronics, Kharkov, 61166 (Ukraine)
  2. Department of Electronics, Engineering Division, University of Guanajuato, Salamanca, Guanajuato, 36885 (Mexico)
Publication Date:
OSTI Identifier:
22280293
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1598; Journal Issue: 1; Conference: LDSD 2011: 7. international conference on low dimensional structures and devices, Telchac (Mexico), 22-27 May 2011; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ABSORPTION SPECTRA; BLOCH EQUATIONS; COMPARATIVE EVALUATIONS; GALLIUM NITRIDES; HARTREE-FOCK METHOD; HETEROJUNCTIONS; INDIUM; INDIUM COMPOUNDS; INTERFACES; MATHEMATICAL MODELS; QUANTUM WELLS; SEGREGATION; SEMICONDUCTOR MATERIALS; SENSITIVITY ANALYSIS; SURFACES