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Title: Evaluation of electron mobility in InSb quantum wells by means of percentage-impact

In order to quantitatively analyze the contribution of each scattering factor toward the total carrier mobility, we use a new convenient figure-of-merit, named a percentage impact. The mobility limit due to a scattering factor, which is widely used to summarize a scattering analysis, has its own advantage. However, a mobility limit is not quite appropriate for the above purpose. A comprehensive understanding of the difference in contribution among many scattering factors toward the total carrier mobility can be obtained by evaluating percentage impacts of scattering factors, which can be straightforwardly calculated from their mobility limits and the total mobility. Our percentage impact analysis shows that threading dislocation is one of the dominant scattering factors for the electron transport in InSb quantum wells at room temperature.
Authors:
; ;  [1]
  1. Homer L. Dodge Department of Physics and Astronomy, and Center for Semiconductor Physics in Nanostructure, University of Oklahoma, 440 W. Brooks St., Norman, OK 73019 (United States)
Publication Date:
OSTI Identifier:
22280289
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1598; Journal Issue: 1; Conference: LDSD 2011: 7. international conference on low dimensional structures and devices, Telchac (Mexico), 22-27 May 2011; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; CARRIER MOBILITY; DISLOCATIONS; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; ELECTRONS; EVALUATION; INDIUM ANTIMONIDES; QUANTUM WELLS; SCATTERING; TEMPERATURE RANGE 0273-0400 K