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Title: Physical properties and applications of In{sub x}Ga{sub 1−x}N nanowires

We have successfully grown In{sub x}Ga{sub 1−x}N nanowires by plasma-assisted molecular beam epitaxy on silicon substrates. The alloy composition and crystal quality have been analyzed by Raman scattering, photoluminescence spectroscopy and x-ray fluorescence nanoprobe techniques. In{sub x}Ga{sub 1−x}N is an one-mode alloy, where the different optical modes have an intermediate frequency of that of pure InN and GaN. The sample composition can be derived from the Raman data. On the other hand, by using the optical gap provided by the emission spectra, we conclude that the samples have a lower Ga content than that provided by the Raman analysis. X-ray fluorescence maps and photoluminescence measured in single nanowires help to explain this contradictory result.
Authors:
 [1] ; ; ;  [2] ;  [3] ; ; ;  [4]
  1. Materials Science Institute, University of Valencia, PO Box 22085, 46071 Valencia, Spain and European Synchrotron Radiation Facility, Experiments Division, 38043 Grenoble (France)
  2. Materials Science Institute, University of Valencia, PO Box 22085, 46071 Valencia (Spain)
  3. European Synchrotron Radiation Facility, Experiments Division, 38043 Grenoble (France)
  4. Georg-August-University Göttingen, IV. Physikalisches Institut, 37077 Göttingen (Germany)
Publication Date:
OSTI Identifier:
22280285
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1598; Journal Issue: 1; Conference: LDSD 2011: 7. international conference on low dimensional structures and devices, Telchac (Mexico), 22-27 May 2011; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; CONCENTRATION RATIO; CRYSTALS; EMISSION SPECTRA; EMISSION SPECTROSCOPY; FLUORESCENCE; GALLIUM NITRIDES; INDIUM NITRIDES; MOLECULAR BEAM EPITAXY; OPTICAL MODES; PHOTOLUMINESCENCE; QUANTUM WIRES; RAMAN EFFECT; RAMAN SPECTROSCOPY; SILICON; SUBSTRATES; X RADIATION