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Title: Measurement of the transmission magnetic circular dichroism of Ga{sub 1−x}Mn{sub x}As epilayers using a built-in p-i-n photodiode

By constructing a GaMnAs epilayer/semi-insulating In{sub 0.2}Ga{sub 0.8}As/(001) n{sup +}-GaAs substrate layer structure as a built-in p-i-n photodiode, we developed a scheme for on-chip measurements of transmission magnetic circular dichroism (T-MCD). Both the hysteresis loops in the magnetic field sweeps and the wavelength scans at saturated magnetic fields measured using the new T-MCD scheme, illustrated the same features as those previously measured on the freestanding GaMnAs thin films by conventional T-MCD. Because a large group of epitaxially grown magnetic film/semiconductor heterostructures, such as Fe, NiFe, CoFeAl, and MnGa films on semiconductor substrates, are becoming important new building blocks for semiconductor-based spin field-effect transistor, perpendicular magnetic tunnel junction (p-MTJ) and lateral MTJ devices, the new T-MCD scheme can be applied to tests of their magnetic properties by forming either p-i-n or Schottky photodiodes.
Authors:
; ; ;  [1]
  1. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083 (China)
Publication Date:
OSTI Identifier:
22278167
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION SPECTROSCOPY; EPITAXY; FIELD EFFECT TRANSISTORS; GALLIUM ARSENIDES; HETEROJUNCTIONS; HYSTERESIS; MAGNETIC CIRCULAR DICHROISM; MAGNETIC FIELDS; MAGNETIC PROPERTIES; MANGANESE COMPOUNDS; PHOTODIODES; SEMICONDUCTOR MATERIALS; SUBSTRATES; THIN FILMS; TUNNEL EFFECT; X-RAY SPECTROSCOPY