Strain-induced magnetism in MoS{sub 2} monolayer with defects
Journal Article
·
· Journal of Applied Physics
- Shenyang National Laboratory for Materials Science, Institute of Metal Research and International Centre for Materials Physics, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016 (China)
The strain-induced magnetism is observed in single-layer MoS{sub 2} with atomic single vacancies from density functional calculations. Calculated magnetic moment is no less than 2 μ{sub B} per vacancy defect. The strain-induced band gap closure is concurrent with the occurrence of the magnetism. Possible physical mechanism of the emergence of strain-induced magnetism is illustrated. We also demonstrate the possibility to test the predicted magnetism in experiment. Our study may provide an opportunity for the design of new type of memory-switching or logic devices by using earth-rich nonmagnetic materials MoS{sub 2}.
- OSTI ID:
- 22278163
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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