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Title: Dominant role of oxygen vacancies in electrical properties of unannealed LaAlO{sub 3}/SrTiO{sub 3} interfaces

We report that in unannealed LaAlO{sub 3}/SrTiO{sub 3} (LAO/STO) heterostructures the critical thickness for the appearance of the two-dimensional electron gas can be less than 4 unit cell, the interface is conducting even for STO substrates with mixed terminations and the low-temperature resistance upturn in LAO/STO heterostructures with thick LAO layers strongly depends on laser fluence. Our experimental results provide fundamental insights into the different roles played by oxygen vacancies and polarization catastrophe in the two-dimensional electron gas in crystalline LAO/STO heterostructures.
Authors:
; ; ;  [1] ;  [2] ; ; ;  [1] ;  [1] ;  [3] ;  [1] ;  [2] ;  [3] ;  [2]
  1. NUSNNI-Nanocore, National University of Singapore, 117411 Singapore (Singapore)
  2. (Singapore)
  3. (NGS), National University of Singapore, 117456 Singapore (Singapore)
Publication Date:
OSTI Identifier:
22278161
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINATES; ELECTRIC CONDUCTIVITY; ELECTRON GAS; HETEROJUNCTIONS; INTERFACES; LANTHANUM OXIDES; LAYERS; OXYGEN; POLARIZATION; STRONTIUM TITANATES; SUBSTRATES; TEMPERATURE DEPENDENCE; TWO-DIMENSIONAL CALCULATIONS; VACANCIES