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Title: Thermoelectric transport in indium and aluminum-doped lead selenide

We present galvanomagnetic and thermomagnetic properties of bulk PbSe doped by substituting the donor elements In and Al for Pb. Although prominent resonant level effects are not seen, lightly doped samples display a high thermoelectric figure of merit (zT) in excess of 1.2 at 600 K, a temperature corresponding well to automotive waste heat recovery applications. This material's high zT is achieved without the use of nanostructuring or the relatively rare element Te. Phonon drag contributions to thermopower appear at temperatures below 30 K in Al-doped samples.
Authors:
; ; ;  [1] ;  [1] ;  [2]
  1. Department of Mechanical and Aerospace Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
22278157
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM; DOPED MATERIALS; GALVANOMAGNETIC EFFECT; INDIUM; LEAD SELENIDES; NANOSTRUCTURES; PHONONS; TEMPERATURE DEPENDENCE; THERMOELECTRIC MATERIALS; THERMOELECTRICITY