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Title: Dielectric strength of parylene HT

The dielectric strength of parylene HT (PA-HT) films was studied at room temperature in a wide thickness range from 500 nm to 50 μm and was correlated with nano- and microstructure analyses. X-ray diffraction and polarized optical microscopy have revealed an enhancement of crystallization and spherulites development, respectively, with increasing the material thickness (d). Moreover, a critical thickness d{sub C} (between 5 and 10 μm) is identified corresponding to the beginning of spherulite developments in the films. Two distinct behaviors of the dielectric strength (F{sub B}) appear in the thickness range. For d ≥ d{sub C}, PA-HT films exhibit a decrease in the breakdown field following a negative slope (F{sub B} ∼ d{sup −0.4}), while for d < d{sub C}, it increases with increasing the thickness (F{sub B} ∼ d{sup 0.3}). An optimal thickness d{sub optim} ∼ 5 μm corresponding to a maximum dielectric strength (F{sub B} ∼ 10 MV/cm) is obtained. A model of spherulite development in PA-HT films with increasing the thickness is proposed. The decrease in F{sub B} above d{sub C} is explained by the spherulites development, whereas its increase below d{sub C} is induced by the crystallites growth. An annealing of the material shows both an enhancement of F{sub B} and an increase of the crystallites and spherulites dimensions, whatever the thickness.more » The breakdown field becomes thickness-independent below d{sub C} showing a strong influence of the nano-scale structural parameters. On the contrary, both nano- and micro-scale structural parameters appear as influent on F{sub B} for d ≥ d{sub C}.« less
Authors:
; ; ;  [1] ;  [2] ;  [3] ;  [4]
  1. Université de Toulouse, UPS, INPT, LAPLACE, 118 route de Narbonne-Bât. 3R3, F-31062 Toulouse Cedex 9 (France)
  2. (France)
  3. Université de Toulouse, UPS, Laboratoire CIRIMAT/LCMIE, 118 route de Narbonne-Bât. 2R1, F-31062 Toulouse Cedex 9 (France)
  4. Speciality Coating Systems, Inc. (SCS), Cookson Electronics, 7645 Woodland Drive, Indianapolis, Indiana 46278 (United States)
Publication Date:
OSTI Identifier:
22278145
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; CRYSTAL GROWTH; CRYSTALLIZATION; DIELECTRIC MATERIALS; ELECTRICAL FAULTS; MICROSTRUCTURE; OPTICAL MICROSCOPY; ORGANIC POLYMERS; TEMPERATURE RANGE 0273-0400 K; THICKNESS; THIN FILMS; X-RAY DIFFRACTION