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Title: Semiconductor to metal transition by tuning the location of N{sub 2}{sup AA} in armchair graphene nanoribbons

The electronic band structures and transport properties of N{sub 2}{sup AA}-doped armchair graphene nanoribbons (aGNRs) with two quasi-adjacent substitutional nitrogen atoms incorporated in pairs of neighboring carbon atoms in the same sublattice A are investigated by using non-equilibrium Green function formalism in combination with density functional theory. The results show that the coupling effect between the Pz orbitals of carbon and nitrogen atoms plays an important role in the transition between semiconductor and metal by different locations of N{sub 2}{sup AA}-doped aGNRs. And the striking negative differential resistance behaviors can be found in such devices. These tremendous properties suggest potential application of N{sub 2}{sup AA}-doped aGNRs in graphene-based nanoelectronic devices.
Authors:
; ; ; ;  [1] ;  [1] ;  [2] ;  [1] ;  [2]
  1. School of Physics and Microelectronic and Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan University, Changsha 410082 (China)
  2. (China)
Publication Date:
OSTI Identifier:
22278141
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; ATOMS; COUPLING; DENSITY FUNCTIONAL METHOD; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRONIC STRUCTURE; GRAPHENE; GREEN FUNCTION; METALS; NANOSTRUCTURES; NITROGEN; SEMICONDUCTOR MATERIALS