skip to main content

Title: Charge trapping in aligned single-walled carbon nanotube arrays induced by ionizing radiation exposure

The effects of near-interfacial trapping induced by ionizing radiation exposure of aligned single-walled carbon nanotube (SWCNT) arrays are investigated via measurements of gate hysteresis in the transfer characteristics of aligned SWCNT field-effect transistors. Gate hysteresis is attributed to charge injection (i.e., trapping) from the SWCNTs into radiation-induced traps in regions near the SWCNT/dielectric interface. Self-consistent calculations of surface-potential, carrier density, and trapped charge are used to describe hysteresis as a function of ionizing radiation exposure. Hysteresis width (h) and its dependence on gate sweep range are investigated analytically. The effects of non-uniform trap energy distributions on the relationship between hysteresis, gate sweep range, and total ionizing dose are demonstrated with simulations and verified experimentally.
Authors:
 [1] ;  [2] ; ; ;  [3]
  1. Information Sciences Institute, University of Southern California, Arlington, Virginia 22203 (United States)
  2. Electronics Science and Technology Division, Naval Research Laboratory, Washington, DC 20375 (United States)
  3. Department of Electrical Engineering, University of Southern California, Los Angeles, California 90089 (United States)
Publication Date:
OSTI Identifier:
22278131
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; CARBON NANOTUBES; CARRIER DENSITY; COMPUTERIZED SIMULATION; DIELECTRIC MATERIALS; ENERGY SPECTRA; FIELD EFFECT TRANSISTORS; HYSTERESIS; INTERFACES; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; SURFACE POTENTIAL; TRAPPING