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Title: Profiling of the injected charge drift current transients by cross-sectional scanning technique

The electric field distribution and charge drift currents in Si particle detectors are analyzed. Profiling of the injected charge drift current transients has been implemented by varying charge injection position within a cross-sectional boundary of the particle detector. The obtained profiles of the induction current density and duration of the injected charge drift pulses fit well the simulated current variations. Induction current transients have been interpreted by different stages of the bipolar and monopolar drift of the injected carriers. Profiles of the injected charge current transients registered in the non-irradiated and neutron irradiated Si diodes are compared. It has been shown that the mixed regime of the competing processes of drift, recombination, and diffusion appears in the measured current profiles on the irradiated samples. The impact of the avalanche effects can be ignored based on the investigations presented. It has been shown that even a simplified dynamic model enabled us to reproduce the main features of the profiled transients of induced charge drift current.
Authors:
; ; ;  [1]
  1. Institute of Applied Research, Vilnius University, Sauletekio av. 9-III, LT-10222 Vilnius (Lithuania)
Publication Date:
OSTI Identifier:
22278124
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COMPARATIVE EVALUATIONS; CURRENT DENSITY; DIFFUSION; ELECTRIC CURRENTS; ELECTRIC FIELDS; IRRADIATION; NEUTRON FLUENCE; PHYSICAL RADIATION EFFECTS; RECOMBINATION; SI SEMICONDUCTOR DETECTORS; SILICON DIODES; TRANSIENTS