skip to main content

Title: Quantum-confinement effects on conduction band structure of rectangular cross-sectional GaAs nanowires

The conduction band structure and electron effective mass of GaAs nanowires with various cross-sectional shapes and orientations were calculated by two methods, a tight-binding method and an effective mass equation taking the bulk full-band structure into account. The effective mass of nanowires increases as the cross-sectional size decreases, and this increase in effective mass depends on the orientations and substrate faces of nanowires. Among [001], [110], and [111]-oriented rectangular cross-sectional GaAs nanowires, [110]-oriented nanowires with wider width along the [001] direction showed the lightest effective mass. This dependence originates from the anisotropy of the Γ valley of bulk GaAs. The relationship between effective mass and bulk band structure is discussed.
Authors:
; ; ; ;  [1]
  1. Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510 (Japan)
Publication Date:
OSTI Identifier:
22278103
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; ANISOTROPY; BAND THEORY; CRYSTAL STRUCTURE; EFFECTIVE MASS; ELECTRONIC STRUCTURE; ELECTRONS; GALLIUM ARSENIDES; ORIENTATION; QUANTUM WIRES; SUBSTRATES