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Title: Positive temperature variation of the bandgap energy in the single-crystalline chalcopyrite semiconductor AgInS{sub 2}

Optical absorption spectra have been measured on the single-crystalline chalcopyrite semiconductor AgInS{sub 2} using polarized light at T = 10–300 K. The bandgap energy E{sub g} of AgInS{sub 2} shows unusual temperature dependence at low temperatures. The resultant temperature coefficient ∂E{sub g}/∂T is found to be positive at T < 130 K and negative above 130 K. This result has been successfully explained by considering the effects of thermal expansion and electron–phonon interaction. The free-exciton emission of photoluminescence spectra also indicates positive temperature dependence of the peak energies at low temperatures. The exciton binding energy of AgInS{sub 2} is determined to be 26.4 meV.
Authors:
;  [1]
  1. Faculty of Science and Technology, Gunma University, Kiryu-shi, Gunma 376-8515 (Japan)
Publication Date:
OSTI Identifier:
22278100
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION SPECTRA; BINDING ENERGY; CHALCOPYRITE; ELECTRON-PHONON COUPLING; ENERGY GAP; EXCITONS; INDIUM SULFIDES; MONOCRYSTALS; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS; SILVER COMPOUNDS; TEMPERATURE COEFFICIENT; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0000-0013 K; TEMPERATURE RANGE 0013-0065 K; TEMPERATURE RANGE 0065-0273 K; THERMAL EXPANSION; VISIBLE RADIATION