skip to main content

Title: Hydrogen plasma induced modification of photoluminescence from a-SiN{sub x}:H thin films

Low temperature (250–350 °C) hydrogen plasma annealing (HPA) treatments have been performed on amorphous hydrogenated silicon nitride (a-SiN{sub x}:H) thin films having a range of compositions and subsequent modification of photoluminescence (PL) is investigated. The PL spectral shape and peak positions for the as deposited films could be tuned with composition and excitation energies. HPA induced modification of PL of these films is found to depend on the N/Si ratio (x). Upon HPA, the PL spectra show an emergence of a red emission band for x ≤ 1, whereas an overall increase of intensity without change in the spectral shape is observed for x > 1. The emission observed in the Si rich films is attributed to nanoscale a-Si:H inclusions. The enhancement is maximum for off-stoichiometric films (x ∼ 1) and decreases as the compositions of a-Si (x = 0) and a-Si{sub 3}N{sub 4} (x = 1.33) are approached, implying high density of non-radiative defects around x = 1. The diffusion of hydrogen in these films is also analyzed by Elastic Recoil Detection Analysis technique.
Authors:
; ;  [1] ;  [2] ; ;  [3] ;  [4]
  1. Nanostech Laboratory, Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110 016 (India)
  2. Nanophotonics Laboratory, Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110 016 (India)
  3. Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, P.O. Box-510119, 01314 Dresden (Germany)
  4. Materials Science Division, Inter-University Accelerator Centre (IUAC), Aruna Asaf Ali Marg, New Delhi 110067 (India)
Publication Date:
OSTI Identifier:
22278099
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; EMISSION SPECTRA; EXCITATION; HYDROGEN; HYDROGENATION; MODIFICATIONS; NANOSTRUCTURES; PHOTOLUMINESCENCE; PLASMA; SILICON NITRIDES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; THIN FILMS