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Title: Theoretical study of optical properties of anti phase domains in GaP

III-V/Si heterostructures are currently investigated for silicon photonics and solar energy conversion. In particular, dilute nitride alloy GaAsPN grown on a GaP/Si platform exhibits lattice match with Si and an optimal band gap configuration for tandem solar cell devices. However, monolithic “coherent” growth of the GaP thin layer on Si suffers from the nucleation of extended structural defects, which can hamper device operation as well as the GaP/Si interface level and through their propagation inside the overall heterostructure. However, the effect of such structural defects on optical and transport properties is actually not well understood in details. In this letter, we investigate the anti phase domains defect (also called inversion domains) by means of ab initio calculations giving insights into the alteration of optical and transport properties of GaP due to the defective GaP/Si interface.
Authors:
 [1] ;  [2] ; ; ;  [1] ; ; ; ; ;  [3]
  1. Institute of R and D on Photovoltaic Energy (IRDEP) (UMR 7174, EDF-CNRS-ENSCP), 6 Quai Watier BP 49, 78401 Chatou cedex (France)
  2. (UMR 6082 CNRS), Université Européenne de Bretagne, 20 Avenue des Buttes de Coësmes, 35708 Rennes (France)
  3. FOTON INSA-Rennes (UMR 6082 CNRS), Université Européenne de Bretagne, 20 Avenue des Buttes de Coësmes, 35708 Rennes (France)
Publication Date:
OSTI Identifier:
22278087
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ARSENIDES; CRYSTAL LATTICES; GALLIUM PHOSPHIDES; INTERFACES; NITRIDES; NUCLEATION; OPTICAL PROPERTIES; SILICON; SOLAR CELLS; SOLAR ENERGY CONVERSION; THIN FILMS