Theoretical study of optical properties of anti phase domains in GaP
- Institute of R and D on Photovoltaic Energy (IRDEP) (UMR 7174, EDF-CNRS-ENSCP), 6 Quai Watier BP 49, 78401 Chatou cedex (France)
- FOTON INSA-Rennes (UMR 6082 CNRS), Université Européenne de Bretagne, 20 Avenue des Buttes de Coësmes, 35708 Rennes (France)
III-V/Si heterostructures are currently investigated for silicon photonics and solar energy conversion. In particular, dilute nitride alloy GaAsPN grown on a GaP/Si platform exhibits lattice match with Si and an optimal band gap configuration for tandem solar cell devices. However, monolithic “coherent” growth of the GaP thin layer on Si suffers from the nucleation of extended structural defects, which can hamper device operation as well as the GaP/Si interface level and through their propagation inside the overall heterostructure. However, the effect of such structural defects on optical and transport properties is actually not well understood in details. In this letter, we investigate the anti phase domains defect (also called inversion domains) by means of ab initio calculations giving insights into the alteration of optical and transport properties of GaP due to the defective GaP/Si interface.
- OSTI ID:
- 22278087
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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