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Title: Room-temperature mid-infrared “M”-type GaAsSb/InGaAs quantum well lasers on InP substrate

We have demonstrated experimentally the InP-based “M”-type GaAsSb/InGaAs quantum-well (QW) laser lasing at 2.41 μm at room temperature by optical pumping. The threshold power density per QW and extracted internal loss were about 234 W/cm{sup 2} and 20.5 cm{sup −1}, respectively. The temperature-dependent photoluminescence (PL) and lasing spectra revealed interesting characteristics for this type of lasers. Two distinct regions in the temperature dependent threshold behavior were observed and the transition temperature was found to coincide with the cross over point of the PL and lasing emission peaks. The current-voltage characteristic of “M”-type QW laser was superior to the inverse “W”-type one due to its thinner barrier for holes. Further improvement of the “M”-type QW structure could lead to a cost-effective mid-infrared light source.
Authors:
; ; ; ; ;  [1]
  1. Department of Electronics Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan (China)
Publication Date:
OSTI Identifier:
22278057
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ANTIMONIDES; ELECTRIC CONDUCTIVITY; GALLIUM ARSENIDES; HETEROJUNCTIONS; HOLES; INDIUM ARSENIDES; INDIUM PHOSPHIDES; LANTHANUM SELENIDES; LASERS; LIGHT SOURCES; OPTICAL PUMPING; PHOTOLUMINESCENCE; POWER DENSITY; QUANTUM WELLS; SUBSTRATES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; TRANSITION TEMPERATURE