Characterization of intrinsic and induced lateral conduction in space dielectric materials
- DESP, The French Aerospace Lab, 2 Avenue Edouard Belin, 31055 Toulouse (France)
- CNES, 18 Avenue Edouard Belin, 31401 Toulouse (France)
Characterization of lateral charge carrier conduction in space dielectrics is of high importance for the prediction of charging behavior and electrostatic discharges on satellites. In the present paper, a new experimental approach for the analysis of surface conduction, which is not well understood and characterized in the literature, is established and discussed. Though this method, based on the use of two Kelvin probes, we have been able to discriminate between lateral and bulk charge transports and to reveal the presence of an intrinsic lateral conductivity on Teflon{sup ®} FEP irradiated with low energy electron beam. We demonstrated that lateral intrinsic conductivity is enhanced when incident current density increases and when approaching the sample surface. The experimental results are analyzed through trapping/detrapping and hopping models. Depending on radiation configuration mode, we have revealed as well the presence of a lateral conductivity that is enhanced by radiation ionization processes, and explained as well with a trapping/recombination model.
- OSTI ID:
- 22278053
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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