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Title: Equilibrium shapes of polycrystalline silicon nanodots

This study is concerned with the topography of nanostructures consisting of arrays of polycrystalline nanodots. Guided by transmission electron microscopy (TEM) measurements of crystalline Si (c-Si) nanodots that evolved from a “dewetting” process of an amorphous Si (a-Si) layer from a SiO{sub 2} coated substrate, we investigate appropriate formulations for the surface energy density and transitions of energy density states at grain boundaries. We introduce a new numerical minimization formulation that allows to account for adhesion energy from an underlying substrate. We demonstrate our approach first for the free standing case, where the solutions can be compared to well-known Wulff constructions, before we treat the general case for interfacial energy settings that support “partial wetting” and grain boundaries for the polycrystalline case. We then use our method to predict the morphologies of silicon nanodots.
Authors:
;  [1] ;  [2] ;  [3] ;  [4]
  1. Department of Mathematics, Technische Universität Berlin, Straße des 17. Juni 136, 10623 Berlin (Germany)
  2. Department of Physics, Humboldt-Universität zu Berlin, Newtonstraße 15, 12489 Berlin (Germany)
  3. Zentrum für Innovationskompetenz SiLi-nano, Martin-Luther-Universität Halle-Wittenberg, Karl-Freiherr-von-Fritsch-Straße 3, 06120 Halle (Germany)
  4. Helmholtz-Zentrum Berlin, Institute for Silicon Photovoltaics, Kekuléstraße 5, 12489 Berlin (Germany)
Publication Date:
OSTI Identifier:
22278046
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; ADHESION; COMPARATIVE EVALUATIONS; ENERGY DENSITY; GRAIN BOUNDARIES; LAYERS; MORPHOLOGY; POLYCRYSTALS; QUANTUM DOTS; SILICON; SILICON OXIDES; SUBSTRATES; SURFACE ENERGY; TRANSMISSION ELECTRON MICROSCOPY