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Title: Single particle transport in two-dimensional heterojunction interlayer tunneling field effect transistor

The single particle tunneling in a vertical stack consisting of monolayers of two-dimensional semiconductors is studied theoretically, and its application to a novel Two-dimensional Heterojunction Interlayer Tunneling Field Effect Transistor (Thin-TFET) is proposed and described. The tunneling current is calculated by using a formalism based on the Bardeen's transfer Hamiltonian, and including a semi-classical treatment of scattering and energy broadening effects. The misalignment between the two 2D materials is also studied and found to influence the magnitude of the tunneling current but have a modest impact on its gate voltage dependence. Our simulation results suggest that the Thin-TFETs can achieve very steep subthreshold swing, whose lower limit is ultimately set by the band tails in the energy gaps of the 2D materials produced by energy broadening. The Thin-TFET is thus very promising as a low voltage, low energy solid state electronic switch.
Authors:
; ; ;  [1] ;  [2]
  1. University of Notre Dame, Notre Dame, Indiana 46556 (United States)
  2. University of Udine, Udine (Italy)
Publication Date:
OSTI Identifier:
22278036
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRONIC STRUCTURE; ENERGY GAP; FIELD EFFECT TRANSISTORS; HAMILTONIANS; HETEROJUNCTIONS; SEMICONDUCTOR MATERIALS; TUNNEL EFFECT; TWO-DIMENSIONAL CALCULATIONS