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Title: III-V/Si on silicon-on-insulator platform for hybrid nanoelectronics

The unique properties of SOI wafers enable the integration of heterogeneous materials with distinct functionalities in different layers. In particular, III-V compound semiconductors are very attractive for low-noise and high-speed electronic and photonic components integrated on a single chip. We have developed a CMOS compatible and fully integrated solution for the integration of III-V compound semiconductors with silicon technology for optoelectronic applications. InAs compound semiconductor nanostructures are synthesized in SOI wafers using the combined ion beam implantation and millisecond liquid-phase epitaxial growth. Optoelectronic and microstructural investigations carried out on implanted, annealed, and selectively etched samples confirm the formation of high-quality III-V compound semiconductor nanostructures.
Authors:
; ; ; ; ; ; ; ; ; ; ; ;  [1] ;  [1] ;  [2] ; ;  [3]
  1. Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400, 01328 Dresden (Germany)
  2. (CFAED), Technische Universität Dresden, 01062 Dresden (Germany)
  3. Maria Curie-Sklodowska University, Pl. M. Curie-Sklodowskiej 1, 20-035 Lublin (Poland)
Publication Date:
OSTI Identifier:
22278032
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; EPITAXY; HETEROJUNCTIONS; INDIUM ARSENIDES; ION BEAMS; ION IMPLANTATION; LAYERS; LIQUIDS; MICROSTRUCTURE; NANOSTRUCTURES; SEMICONDUCTOR MATERIALS; SILICON