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Title: Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells

The optical properties of GaN/Al{sub 0.15}Ga{sub 0.85}N multiple quantum wells are examined in 8 K–300 K temperature range. Both polarized CW and time resolved temperature-dependent photoluminescence experiment are performed so that we can deduce the relative contributions of the non-radiative and radiative recombination processes. From the calculation of the proportion of the excitonic population having wave vector in the light cone, we can deduce the variation of the radiative decay time with temperature. We find part of the excitonic population to be localized in concert with the report of Corfdir et al. (Jpn. J. Appl. Phys., Part 2 52, 08JC01 (2013)) in case of a-plane quantum wells.
Authors:
; ; ;  [1] ;  [2] ; ; ; ; ; ; ;  [3] ;  [4]
  1. CNRS, Laboratoire Charles Coulomb, UMR 5221, F-34095 Montpellier (France)
  2. (France)
  3. Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23238 (United States)
  4. Kyma Technologies, Raleigh, North Carolina 27617 (United States)
Publication Date:
OSTI Identifier:
22278025
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; EXCITONS; GALLIUM NITRIDES; LIGHT CONE; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; QUANTUM WELLS; RECOMBINATION; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0000-0013 K; TEMPERATURE RANGE 0013-0065 K; TEMPERATURE RANGE 0065-0273 K; TIME RESOLUTION