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Title: The electrical conduction properties of poly-crystalline indium-zinc-oxide film

We have developed a high-mobility and high-uniform oxide semiconductor using poly-crystalline semiconductor material composed of indium and zinc (p-IZO). A typical conduction mechanism of p-IZO film was demonstrated by the grain boundary scattering model as in polycrystalline silicon. The grain boundary potential of the 2-h-annealed IZO film was calculated to be 100 meV, which was comparable to that of the polycrystalline silicon. However, the p-IZO thin film transistor (TFT) measurement shows rather uniform characteristics. It denotes that the mobility deterioration around the grain boundaries is lower than the case for low-temperature polycrystalline silicon. This assertion was made based on the difference of the mobility between the polycrystalline and amorphous IZO film being much smaller than is the case for silicon transistors. Therefore, we conclude that the p-IZO is a promising material for a TFT channel, which realizes high drift mobility and uniformity simultaneously.
Authors:
 [1] ;  [2] ; ; ; ; ;  [1] ;  [3]
  1. Advanced Technology Research Laboratories, Idemitsu Kosan Co., Ltd., 1280 Kami-izumi, Sodegaura, Chiba 2990293 (Japan)
  2. (Japan)
  3. Graduate School of Material Science, Nara Institute of Science and Technology, 8916-5, Takayama-cho, Ikoma, Nara 6300192 (Japan)
Publication Date:
OSTI Identifier:
22278005
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; CARRIER MOBILITY; COMPARATIVE EVALUATIONS; ELECTRIC CONDUCTIVITY; GRAIN BOUNDARIES; INDIUM COMPOUNDS; POLYCRYSTALS; SEMICONDUCTOR MATERIALS; SILICON; THIN FILMS; TRANSISTORS; ZINC OXIDES