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Title: Effect of dopant compensation on the temperature dependence of the transport properties in p-type monocrystalline silicon

In this paper, we investigate the temperature variations of the hole transport properties in initially uncompensated boron-doped Czochralski silicon progressively compensated through thermal donors activation. After each donor generation anneal, the boron and thermal donor concentrations in the samples are determined using (1) the change in carrier concentration at room temperature and (2) the analysis of the temperature variation of the carrier concentration in the range 77–350 K. By comparing both methods with theory, evidence is brought that down to 77 K the Hall factor is unaffected by compensation up to high compensation levels. This is of great interest for researchers working on new solar-grade materials since it nicely suggests that Hall factor models previously established for non-compensated silicon can be applied to compensated samples, for example, when extracting the individual dopant concentrations from the temperature variations of the hole concentration. At very high compensation levels, anomalous Hall data lead to erroneously low carrier mobility values. We showed that this artifact was due to the formation of a n-p-n transistor, arising from the preferential formation of thermal donors in the sample's subsurface. After rejecting these unphysical data from the analysis, we confirm that the hole mobility is greatly affected by compensation inmore » the temperature range investigated. We eventually confront our experimental data to current mobility models and discuss the possible sources of discrepancy.« less
Authors:
; ; ;  [1]
  1. CEA/LITEN/DTS, INES, 50 avenue du Lac Léman, 73377 Le Bourget-du-Lac (France)
Publication Date:
OSTI Identifier:
22277998
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BORON; CARRIER MOBILITY; COMPARATIVE EVALUATIONS; CONCENTRATION RATIO; DOPED MATERIALS; ELECTRIC CURRENTS; HALL EFFECT; HOLE MOBILITY; HOLES; N-TYPE CONDUCTORS; SILICON; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K