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Title: Influence of substrate quality on structural properties of AlGaN/GaN superlattices grown by molecular beam epitaxy

Short-period AlGaN/GaN superlattices were established as versatile test structures to investigate the structural properties of molecular beam epitaxy (MBE)-grown GaN and AlGaN layers and their dependence on the GaN substrate quality. X-ray diffractometry data of the investigated superlattices allow access to relevant structural parameters such as aluminum mole fraction and layer thicknesses. The occurrence of theoretically predicted intense high-order satellite peaks and pronounced interface fringes in the diffraction pattern reflects abrupt interfaces and perfect 2-dimensional growth resulting in smooth surfaces. The data unambiguously demonstrate that the structural quality of the MBE grown layers is limited by the structural properties of the GaN substrate.
Authors:
 [1] ; ;  [2] ;  [1] ;  [3]
  1. NaMLab gGmbH, Nöthnitzer Straße 64, 01187 Dresden (Germany)
  2. TU Dresden, Institute of Semiconductors and Microsystems, Nöthnitzer Straße 64, 01187 Dresden (Germany)
  3. (Germany)
Publication Date:
OSTI Identifier:
22277996
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM; CRYSTAL GROWTH; CRYSTAL STRUCTURE; GALLIUM NITRIDES; HETEROJUNCTIONS; INTERFACES; LAYERS; MOLECULAR BEAM EPITAXY; SUBSTRATES; SUPERLATTICES; SURFACES; THICKNESS; X-RAY DIFFRACTION