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Title: Effect of internal electric field on InAs/GaAs quantum dot solar cells

We studied time-resolved carrier recombination in InAs/GaAs quantum dot (QD) solar cells. The electric field in a p-i-n diode structure spatially separates photoexcited carriers in QDs, strongly affecting the conversion efficiency of intermediate-band solar cells. The radiative decay lifetime is dramatically reduced in a strong electric field (193‚ÄČkV/cm) by efficient recombination due to strong carrier localization in each QD and significant tunneling-assisted electron escape. Conversely, an electric field of the order of 10‚ÄČkV/cm maintains electronic coupling in the stacked QDs and diminishes tunneling-assisted electron escape.
Authors:
; ; ; ;  [1]
  1. Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, 1-1 Rokkodai, Nada, Kobe 657-8501 (Japan)
Publication Date:
OSTI Identifier:
22277995
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; COUPLING; ELECTRIC FIELDS; ELECTRONS; ENERGY CONVERSION; ENERGY EFFICIENCY; GALLIUM ARSENIDES; HETEROJUNCTIONS; INDIUM ARSENIDES; LIFETIME; QUANTUM DOTS; RECOMBINATION; SOLAR CELLS; TIME RESOLUTION; TUNNEL EFFECT