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Title: Excitation wavelength dependence of the anomalous circular photogalvanic effect in undoped InGaAs/AlGaAs quantum wells

The excitation wavelength dependence of the anomalous circular photogalvanic effect (ACPGE) current arising from the reciprocal spin Hall effect (RSHE) in undoped InGaAs/AlGaAs quantum wells is measured under normal incidence of circularly polarized light at room temperature. We found that the spot location with the maximum ACPGE current is wavelength independent. And the normalized ACPGE current decreases at smaller wavelengths, which can be attributed to the sharp decrease of the spin relaxation time (τ{sub s}) and the hot electron relaxation time (τ{sub 1}) at smaller wavelengths. The study of the excitation wavelength dependence of ACPGE current is a good supplement to the in-depth investigation of RSHE.
Authors:
; ; ; ; ; ;  [1]
  1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China)
Publication Date:
OSTI Identifier:
22277994
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; ALUMINIUM ARSENIDES; ELECTRIC CURRENTS; ELECTRONS; EXCITATION; FREQUENCY DEPENDENCE; GALLIUM ARSENIDES; HALL EFFECT; INDIUM ARSENIDES; QUANTUM WELLS; RELAXATION TIME; SPIN; TEMPERATURE RANGE 0273-0400 K