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Title: Experimental determination of vacuum-level band alignments of SnS-based solar cells by photoelectron yield spectroscopy

Energy band offsets of SnS-based solar cell structure using various n-type semiconductors, such as CdS, SnS{sub 2}, In{sub 2}S{sub 3}, ZnIn{sub 2}Se{sub 4}, ZnO, and Mg{sub 0.3}In{sub 0.7}O, are evaluated by photoelectron yield spectroscopy. The valence band discontinuities are estimated to be 1.6 eV for both SnS/CdS and SnS/SnS{sub 2}, 0.9 eV for SnS/In{sub 2}S{sub 3}, 1.7 eV for SnS/ZnIn{sub 2}Se{sub 4}, and 1.8 eV for both SnS/ZnO and SnS/Mg{sub 0.3}Zn{sub 0.7}O. Using the valence band discontinuity values and the corresponding energy bandgaps of the layers, energy band diagrams are developed. This study implied a type-I heterostructure, appropriate for SnS-based solar cell, for the ZnIn{sub 2}Se{sub 4} or Mg{sub x}Zn{sub 1−x}O (0 ≤ x ≤ 0.3) interface and type-II for other junctions.
Authors:
; ;  [1] ; ;  [2]
  1. Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda 278-8510 (Japan)
  2. Department of Physics, Sri Venkateswara University, Tirupati 517502 (India)
Publication Date:
OSTI Identifier:
22277993
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CADMIUM SULFIDES; ELECTRON SPECTROSCOPY; ELECTRONIC STRUCTURE; HETEROJUNCTIONS; INDIUM SULFIDES; INTERFACES; N-TYPE CONDUCTORS; SOLAR CELLS; TIN SULFIDES; VALENCE; ZINC OXIDES