Ballistic performance comparison of monolayer transition metal dichalcogenide MX{sub 2} (M = Mo, W; X = S, Se, Te) metal-oxide-semiconductor field effect transistors

Journal Article · Fri Feb 28 00:00:00 EST 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4866872· OSTI ID:22277988

Chang, Jiwon; Register, Leonard F.; Banerjee, Sanjay K. ^[1]

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1. Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States)

We study the transport properties of monolayer MX{sub 2} (M = Mo, W; X = S, Se, Te) n- and p-channel metal-oxide-semiconductor field effect transistors (MOSFETs) using full-band ballistic non-equilibrium Green's function simulations with an atomistic tight-binding Hamiltonian with hopping potentials obtained from density functional theory. We discuss the subthreshold slope, drain-induced barrier lowering (DIBL), as well as gate-induced drain leakage (GIDL) for different monolayer MX{sub 2} MOSFETs. We also report the possibility of negative differential resistance behavior in the output characteristics of nanoscale monolayer MX{sub 2} MOSFETs.

• OSTI ID: 22277988
• Journal Information: Journal of Applied Physics, Vol. 115, Issue 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
COMPARATIVE EVALUATIONS
COMPUTERIZED SIMULATION
DENSITY FUNCTIONAL METHOD
ELECTRIC CONDUCTIVITY
EQUILIBRIUM
GREEN FUNCTION
HAMILTONIANS
MOLYBDENUM SULFIDES
MOSFET
NANOSTRUCTURES
POTENTIALS
TELLURIDES
TUNGSTEN SELENIDES