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Title: Domain wall stability in ferroelectrics with space charges

Significant effect of semiconductor properties on domain configurations in ferroelectrics is demonstrated, especially in the case of doped materials. Phase field simulations are performed for ferroelectrics with space charges due to donors and electronic charge carriers. The free charges introduced thereby can act as a source for charge compensation at domain walls with uncompensated polarization bound charges. Results indicate that the equilibrium position of a domain wall with respect to its rotation in a head-to-head or a tail-to-tail domain configuration depends on the charge defect concentration and the Fermi level position.
Authors:
; ; ; ;  [1]
  1. Institute of Materials Science, Technische Universit├Ąt Darmstadt, D-64287 Darmstadt (Germany)
Publication Date:
OSTI Identifier:
22277983
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; CHARGE CARRIERS; COMPUTERIZED SIMULATION; CONCENTRATION RATIO; CRYSTAL DEFECTS; DOMAIN STRUCTURE; DOPED MATERIALS; FERMI LEVEL; FERROELECTRIC MATERIALS; PHASE STABILITY; POLARIZATION; ROTATION; SEMICONDUCTOR MATERIALS; SPACE CHARGE