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Title: Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells

The effect of carrier localization in InGaN/GaN multiple quantum wells (MQWs) light-emitting diodes is investigated by photoluminescence (PL) and time-resolved PL (TRPL) measurements. PL results show that two peaks obtained by Gaussian fitting both relate to the emission from localized states. By fitting the TRPL lifetimes at various emission energies, two localization depths corresponding to the In-rich regions and quasi-MQWs regions are obtained. Using a model we proposed, we suggest that compositional fluctuations of In content and variation of well width are responsible for carrier localization in In-rich regions and quasi-MQWs regions, respectively.
Authors:
; ; ; ; ;  [1] ; ;  [2] ; ;  [3]
  1. Semiconductor Lighting R and D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
  2. Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan (China)
  3. Department of Electronic Engineering, Tungnan University, Taipei 22202, Taiwan (China)
Publication Date:
OSTI Identifier:
22277979
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; CHARGE CARRIERS; FLUCTUATIONS; GALLIUM NITRIDES; HETEROJUNCTIONS; INDIUM COMPOUNDS; INTERFACES; LIFETIME; LIGHT EMITTING DIODES; PHOTOLUMINESCENCE; QUANTUM WELLS; TIME RESOLUTION