Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells

Li, Zhi; Kang, Junjie; Li, Hongjian; Liu, Zhiqiang; Yi, Xiaoyan; Wang, Guohong; Wei Wang, Bo; Chuan Feng, Zhe; Hsiang Weng, Yu; Lee, Yueh-Chien

doi:10.1063/1.4866815

Title: Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells

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Abstract

The effect of carrier localization in InGaN/GaN multiple quantum wells (MQWs) light-emitting diodes is investigated by photoluminescence (PL) and time-resolved PL (TRPL) measurements. PL results show that two peaks obtained by Gaussian fitting both relate to the emission from localized states. By fitting the TRPL lifetimes at various emission energies, two localization depths corresponding to the In-rich regions and quasi-MQWs regions are obtained. Using a model we proposed, we suggest that compositional fluctuations of In content and variation of well width are responsible for carrier localization in In-rich regions and quasi-MQWs regions, respectively.

Authors:

Li, Zhi; Kang, Junjie; Li, Hongjian; Liu, Zhiqiang; Yi, Xiaoyan; Wang, Guohong ^[1]; Wei Wang, Bo; Chuan Feng, Zhe ^[2]; Hsiang Weng, Yu; Lee, Yueh-Chien ^[3]

Semiconductor Lighting R and D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan (China)
Department of Electronic Engineering, Tungnan University, Taipei 22202, Taiwan (China)

Publication Date:: Fri Feb 28 00:00:00 EST 2014

OSTI Identifier:: 22277979

Resource Type:: Journal Article

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Volume: 115; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; CHARGE CARRIERS; FLUCTUATIONS; GALLIUM NITRIDES; HETEROJUNCTIONS; INDIUM COMPOUNDS; INTERFACES; LIFETIME; LIGHT EMITTING DIODES; PHOTOLUMINESCENCE; QUANTUM WELLS; TIME RESOLUTION

Citation Formats


                    Li, Zhi, Kang, Junjie, Li, Hongjian, Liu, Zhiqiang, Yi, Xiaoyan, Wang, Guohong, Wei Wang, Bo, Chuan Feng, Zhe, Hsiang Weng, Yu, and Lee, Yueh-Chien. Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells.  United States: N. p., 2014. 
        Web.  doi:10.1063/1.4866815.

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                    Li, Zhi, Kang, Junjie, Li, Hongjian, Liu, Zhiqiang, Yi, Xiaoyan, Wang, Guohong, Wei Wang, Bo, Chuan Feng, Zhe, Hsiang Weng, Yu, & Lee, Yueh-Chien. Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells.  United States.  https://doi.org/10.1063/1.4866815

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                    Li, Zhi, Kang, Junjie, Li, Hongjian, Liu, Zhiqiang, Yi, Xiaoyan, Wang, Guohong, Wei Wang, Bo, Chuan Feng, Zhe, Hsiang Weng, Yu, and Lee, Yueh-Chien. 2014.  
        "Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells".  United States.  https://doi.org/10.1063/1.4866815.

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@article{osti_22277979,

  title        = {Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells},

  author       = {Li, Zhi and Kang, Junjie and Li, Hongjian and Liu, Zhiqiang and Yi, Xiaoyan and Wang, Guohong and Wei Wang, Bo and Chuan Feng, Zhe and Hsiang Weng, Yu and Lee, Yueh-Chien},

  abstractNote = {The effect of carrier localization in InGaN/GaN multiple quantum wells (MQWs) light-emitting diodes is investigated by photoluminescence (PL) and time-resolved PL (TRPL) measurements. PL results show that two peaks obtained by Gaussian fitting both relate to the emission from localized states. By fitting the TRPL lifetimes at various emission energies, two localization depths corresponding to the In-rich regions and quasi-MQWs regions are obtained. Using a model we proposed, we suggest that compositional fluctuations of In content and variation of well width are responsible for carrier localization in In-rich regions and quasi-MQWs regions, respectively.},

  doi          = {10.1063/1.4866815},

  url          = {https://www.osti.gov/biblio/22277979},
  journal      = {Journal of Applied Physics},

  issn         = {0021-8979},

  number       = 8,

  volume       = 115,

  place        = {United States},

  year         = {Fri Feb 28 00:00:00 EST 2014},

  month        = {Fri Feb 28 00:00:00 EST 2014}

}

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