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Title: Thermal ionization induced metal-semiconductor transition and room temperature ferromagnetism in trivalent doped ZnO codoped with lithium

Thermal ionization induced metallic to semiconductor (MST) transition occurring at 460 K for Zn{sub 0.97}Al{sub 0.03}O, 463 K for Zn{sub 0.94}Al{sub 0.03}Li{sub 0.03}O, and 503 K for Zn{sub 0.91}Al{sub 0.03}Li{sub 0.03}Mn{sub 0.03}O has been found in the sol-gel synthesized (using hexamethylenetetramine), trivalent doped (Al, Mn) ZnO codoped with lithium. Increase in the thermally ionized carrier concentration due to Al doping is responsible for near band edge (NBE) peak shift causing Fermi level to move into conduction band making it metallic consistent with resistivity results. Free carrier (thermally activated) neutralization with ionized donor is responsible for semiconducting nature, which is supported from the free carrier screening produced energy shift in the NBE of photoluminescence peak. Furthermore, independently band gap shrinkage is also obtained from UV-Visible studies confirming localization induced MST. An anti-correlation is found between defect density (DLE) and room temperature ferromagnetism (RTFM) indicating intrinsic defects are not directly responsible for RTFM.
Authors:
; ; ;  [1] ;  [2]
  1. Department of Physics, Pondicherry Engineering College, Puducherry 605 014 (India)
  2. Department of Chemistry, Pondicherry Engineering College, Puducherry 605 014 (India)
Publication Date:
OSTI Identifier:
22277948
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; CONCENTRATION RATIO; CORRELATIONS; FERMI LEVEL; FERROMAGNETISM; LITHIUM; LITHIUM COMPOUNDS; MANGANESE COMPOUNDS; PHASE TRANSFORMATIONS; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS; SOL-GEL PROCESS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; UROTROPIN; ZINC OXIDES