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Title: Angular distribution of polarized spontaneous emissions and its effect on light extraction behavior in InGaN-based light emitting diodes

Angular intensity distributions of differently polarized light sources in multiple quantum wells (MQWs) and their effects on extraction behavior of spontaneous emission from light emitting diode (LED) chips have been studied. Theoretical calculation based on k·p approximation, ray tracing simulation and angular electroluminescence measurement were applied in this work. It is found that the electron-hole recombination in the InGaN MQWs produces a spherical distribution of an s-polarized source and a dumbbell-shaped p-polarized source. Light rays from different polarized sources experience different extraction processes, determining the polarization degree of electro-luminescence and extraction efficiency of LEDs.
Authors:
; ; ; ; ; ; ;  [1]
  1. State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China)
Publication Date:
OSTI Identifier:
22277943
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; ANGULAR DISTRIBUTION; APPROXIMATIONS; COMPUTERIZED SIMULATION; ELECTROLUMINESCENCE; GALLIUM NITRIDES; HOLES; INDIUM COMPOUNDS; LIGHT EMITTING DIODES; LIGHT SOURCES; POLARIZATION; QUANTUM EFFICIENCY; QUANTUM WELLS; RECOMBINATION; VISIBLE RADIATION