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Title: In situ X-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy

The effects of GaN quantum barriers with changing growth temperatures on the interfacial characteristics of GaN/InGaN single quantum well (SQW) grown on GaN templates by metalorganic vapour phase epitaxy were in situ investigated by X-ray crystal truncation rod (CTR) scattering and X-ray reflectivity measurements at growth temperature using a laboratory level X-ray diffractometer. Comparing the curve-fitting results of X-ray CTR scattering spectra obtained at growth temperature with that at room temperature, the In{sub x}Ga{sub 1-x}N with indium composition less than 0.11 was stabile of the indium distribution at the interface during the whole growth processes. By using several monolayers thickness GaN capping layer to protect the InGaN well layer within temperature-ramping process, the interfacial structure of the GaN/InGaN SQW was drastically improved on the basis of the curve-fitting results of X-ray CTR scattering spectra, and the narrow full width at half-maximum and strong luminous intensity were observed in room temperature photoluminescence spectra.
Authors:
;  [1] ;  [2] ;  [3] ;  [4] ;  [1] ;  [4]
  1. Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Aichi 464-8603 (Japan)
  2. Synchrotron Radiation Research Centre, Nagoya University, Nagoya, Aichi 464-8603 (Japan)
  3. Synchrotron Radiation Center, Aichi Science and Technology Foundation, Seto, Aichi 489-0965 (Japan)
  4. (Japan)
Publication Date:
OSTI Identifier:
22277942
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; COMPARATIVE EVALUATIONS; CRYSTAL GROWTH; CRYSTALS; DIFFUSION BARRIERS; GALLIUM NITRIDES; INDIUM; INDIUM COMPOUNDS; INTERFACES; LAYERS; ORGANOMETALLIC COMPOUNDS; PHOTOLUMINESCENCE; QUANTUM WELLS; REFLECTIVITY; VAPOR PHASE EPITAXY; X-RAY DIFFRACTION; X-RAY SPECTRA