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Title: Measurement of bandgap energies in low-k organosilicates

In this work, experimental measurements of the electronic band gap of low-k organosilicate dielectrics will be presented and discussed. The measurement of bandgap energies of organosilicates will be made by examining the onset of inelastic energy loss in core-level atomic spectra using X-ray photoelectron spectroscopy. This energy serves as a reference point from which many other facets of the material can be understood, such as the location and presence of defect states in the bulk or at the interface. A comparison with other measurement techniques reported in the literature is presented.
Authors:
; ; ;  [1] ;  [2] ;  [3] ;  [4] ;  [5]
  1. Plasma Processing and Technology Laboratory and Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)
  2. Lam Research, Tualatin, Oregon 97062 (United States)
  3. IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598 (United States)
  4. Applied Materials, Sunnyvale, California 94085 (United States)
  5. Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States)
Publication Date:
OSTI Identifier:
22277928
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COMPARATIVE EVALUATIONS; DIELECTRIC MATERIALS; ELECTRONIC STRUCTURE; ENERGY GAP; ENERGY LOSSES; INTERFACES; ORGANIC COMPOUNDS; SILICATES; X-RAY PHOTOELECTRON SPECTROSCOPY