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Title: Seebeck coefficient of one electron

The Seebeck coefficient of one electron, driven thermally into a semiconductor single-electron box, is investigated theoretically. With a finite temperature difference ΔT between the source and charging island, a single electron can charge the island in equilibrium, directly generating a Seebeck effect. Seebeck coefficients for small and finite ΔT are calculated and a thermally driven Coulomb staircase is predicted. Single-electron Seebeck oscillations occur with increasing ΔT, as one electron at a time charges the box. A method is proposed for experimental verification of these effects.
Authors:
 [1]
  1. Department of Electrical and Electronic Engineering, Imperial College London, South Kensington Campus, London SW7 2AZ (United Kingdom)
Publication Date:
OSTI Identifier:
22277925
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRONS; OSCILLATIONS; SEEBECK EFFECT; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE; THERMAL EQUILIBRIUM