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Title: Kelvin probe force microscopy study on operating In-Sn-O-channel ferroelectric-gate thin-film transistors

Surface potentials of an operating In-Sn-O channel ferroelectric-gate transistor (FGT) were mapped by Kelvin probe force microscopy. We clearly observed a gradual transition within the channel from linear potential profile to superlinear ones when drain voltage approaches and overcomes gate voltage, which is related to the physics of electronic transport under field-effect doping. The dependence of field-effect mobility on gate-bias and lateral field, as well as the effect of source/drain electrode materials on transport properties, was also elucidated. This study provides useful information for optimizing the FGT performance and for understanding its underlying physics.
Authors:
; ;  [1] ;  [2] ;  [3]
  1. ERATO, Shimoda Nano-Liquid Process Project, Japan Science and Technology Agency, 2-13 Asahidai, Nomi, Ishikawa 923-1211 (Japan)
  2. (Japan)
  3. Yokkaichi Research Center, JSR Corporation, Yokkaichi 510-8552 (Japan)
Publication Date:
OSTI Identifier:
22277919
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIER MOBILITY; ELECTRIC POTENTIAL; FERROELECTRIC MATERIALS; INDIUM; INDIUM COMPOUNDS; MICROSCOPY; OPTIMIZATION; PERFORMANCE; PROBES; SURFACE POTENTIAL; THIN FILMS; TIN; TIN OXIDES; TRANSISTORS