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Title: Time-resolved photoluminescence from defects in n-type GaN

Point defects in GaN were studied with time-resolved photoluminescence (PL). The effects of temperature and excitation intensity on defect-related PL have been investigated theoretically and experimentally. A phenomenological model, based on rate equations, explains the dependence of the PL intensity on excitation intensity, as well as the PL lifetime and its temperature dependence. We demonstrate that time-resolved PL measurements can be used to find the concentrations of free electrons and acceptors contributing to PL in n-type semiconductors.
Authors:
 [1]
  1. Physics Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)
Publication Date:
OSTI Identifier:
22277913
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CONCENTRATION RATIO; ELECTRONS; EXCITATION; GALLIUM NITRIDES; LIFETIME; N-TYPE CONDUCTORS; PHOTOLUMINESCENCE; POINT DEFECTS; TEMPERATURE DEPENDENCE; TIME RESOLUTION