Lattice-engineered Si{sub 1-x}Ge{sub x}-buffer on Si(001) for GaP integration
- IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany)
- Technische Universität Ilmenau, Gustav-Kirchhoff-Str. 5, 98693 Ilmenau (Germany)
- Institut für Physik, Humboldt Universität zu Berlin, Newtonstrasse 15, 12489 Berlin (Germany)
- Paul Drude Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)
We report a detailed structure and defect characterization study on gallium phosphide (GaP) layers integrated on silicon (Si) (001) via silicon-germanium (SiGe) buffer layers. The presented approach uses an almost fully relaxed SiGe buffer heterostructure of only 400 nm thickness whose in-plane lattice constant is matched to GaP—not at room but at GaP deposition temperature. Single crystalline, pseudomorphic 270 nm thick GaP is successfully grown by metalorganic chemical vapour deposition on a 400 nm Si{sub 0.85}Ge{sub 0.15}/Si(001) heterosystem, but carries a 0.08% tensile strain after cooling down to room temperature due to the bigger thermal expansion coefficient of GaP with respect to Si. Transmission electron microscopy (TEM) studies confirm the absence of misfit dislocations in the pseudomorphic GaP film but growth defects (e.g., stacking faults, microtwins, etc.) especially at the GaP/SiGe interface region are detected. We interpret these growth defects as a residue of the initial 3D island coalescence phase of the GaP film on the SiGe buffer. TEM-energy-dispersive x-ray spectroscopy studies reveal that these defects are often correlated with stoichiometric inhomogeneities in the GaP film. Time-of-flight Secondary ion mass spectrometry detects sharp heterointerfaces between GaP and SiGe films with a minor level of Ga diffusion into the SiGe buffer.
- OSTI ID:
- 22277911
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CHEMICAL VAPOR DEPOSITION
COALESCENCE
DIFFUSION
DISLOCATIONS
GALLIUM PHOSPHIDES
GERMANIUM
GERMANIUM SILICIDES
INTERFACES
LATTICE PARAMETERS
LAYERS
MASS SPECTROSCOPY
MONOCRYSTALS
SILICON
STACKING FAULTS
TEMPERATURE RANGE 0273-0400 K
THERMAL EXPANSION
THIN FILMS
TIME-OF-FLIGHT METHOD
TRANSMISSION ELECTRON MICROSCOPY
X-RAY SPECTROSCOPY