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Title: A study on the evolution of dielectric function of ZnO thin films with decreasing film thickness

Dielectric function, band gap, and exciton binding energies of ultrathin ZnO films as a function of film thickness have been obtained with spectroscopic ellipsometry. As the film thickness decreases, both real (ε{sub 1}) and imaginary (ε{sub 2}) parts of the dielectric function decrease significantly, and ε{sub 2} shows a blue shift. The film thickness dependence of the dielectric function is shown related to the changes in the interband absorption, discrete-exciton absorption, and continuum-exciton absorption, which can be attributed to the quantum confinement effect on both the band gap and exciton binding energies.
Authors:
; ;  [1] ;  [2] ;  [3] ;  [4]
  1. School of Electrical and Electronic Engineering, Nanyang Technological University, 639798 Singapore (Singapore)
  2. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology, Chengdu 610054 (China)
  3. School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006 (China)
  4. GLOBALFOUNDRIES Singapore Pte Ltd, 738406 Singapore (Singapore)
Publication Date:
OSTI Identifier:
22277898
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION; BINDING ENERGY; ELECTRONIC STRUCTURE; ELLIPSOMETRY; ENERGY GAP; EXCITONS; PERMITTIVITY; THICKNESS; THIN FILMS; ZINC OXIDES