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Title: Failure of semiclassical models to describe resistivity of nanometric, polycrystalline tungsten films

The impact of electron scattering at surfaces and grain boundaries in nanometric polycrystalline tungsten (W) films was studied. A series of polycrystalline W films ranging in thickness from 10 to 310 nm and lateral grain size from 74 to 133 nm were prepared on thermally oxidized Si. The Fuchs-Sondheimer surface-scattering model and Mayadas-Shatzkes grain-boundary scattering model were employed for quantitative analyses. Predictions from the theoretical models were found to deviate systematically from the experimental data. Possible reasons for the failure of the theoretical models to describe the experimental data are explored. Finally, a discussion of the crucial features lacking from existing models is presented, along with possible avenues for improving the models to result in better agreement with experimental data.
Authors:
 [1] ;  [2] ;  [1] ;  [3] ;  [4] ;  [1] ;  [5]
  1. Department of Materials Science and Engineering, Carnegie Mellon University, 5000 Forbes Avenue, Pittsburgh, Pennsylvania 15213 (United States)
  2. (Korea, Republic of)
  3. Advanced Materials Processing and Analysis Center and Department of Physics, University of Central Florida, 4000 Central Florida Boulevard, Orlando, Florida 32816 (United States)
  4. Department of Materials Science and Engineering, University of Central Florida, 4000 Central Florida Boulevard, Orlando, Florida 32816 (United States)
  5. (United States)
Publication Date:
OSTI Identifier:
22277886
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; ELECTRONS; FAILURES; GRAIN BOUNDARIES; GRAIN SIZE; NANOSTRUCTURES; POLYCRYSTALS; SCATTERING; SEMICLASSICAL APPROXIMATION; SILICON; SURFACES; THIN FILMS; TUNGSTEN