Determination of carrier concentration dependent electron effective mass and scattering time of n-ZnO thin film by terahertz time domain spectroscopy
- Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore)
- Institute of Materials and Research Engineering, Agency for Science, Technology and Research, 3 Research Link, Singapore 117602 (Singapore)
- Department of Chemical and Bioengineering, National University of Singapore, Singapore 117542 (Singapore)
- Department of Physics, National University of Singapore, Singapore 117542 (Singapore)
- NUSNNI-Nanocore, National University of Singapore, Singapore 117576 (Singapore)
We demonstrated a novel and widely accessible method for determining the electron effective mass and scattering time of ZnO films with different carrier concentrations by combining terahertz time-domain spectroscopy with Hall measurement. The terahertz time domain spectroscopy (THz-TDS) transmission spectra (0.1–2THz) were well described by Drude model. It is found that electron effective mass varied from 0.23m{sub 0} to 0.26m{sub 0} as the electron concentration changes from 5.9 × 10{sup 17} cm{sup −3} to 4.0 × 10{sup 19} cm{sup −3}. The carrier concentration dependent characteristic is ascribed to the non-parabolicity of conduction band. Free carrier localization mechanism explained the discrepancy in mobilities obtained from THz-TDS and Hall measurements.
- OSTI ID:
- 22275832
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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