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Title: Multistep metal insulator transition in VO{sub 2} nanowires on Al{sub 2}O{sub 3} (0001) substrates

We observed a temperature- and voltage-induced multistep metal-insulator transition (MIT) in vanadium dioxide nanowires fabricated on Al{sub 2}O{sub 3} (0001) substrates. Nanowires with a width of 200 nm showed a multistep MIT that exhibited a resistivity change of nearly two orders of magnitude in a 0.5 K temperature step. These multistep resistivity jumps can be understood as a transition of a single domain, whose size is estimated to be around 50–70 nm from numerical calculation. We found that the temperature-induced isotropic conductive behavior of the nanowires becomes similar to the voltage-induced anisotropic one as their width decreases.
Authors:
; ;  [1]
  1. Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan)
Publication Date:
OSTI Identifier:
22275819
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM OXIDES; METALS; QUANTUM WIRES; VANADIUM OXIDES