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Title: Multistep metal insulator transition in VO{sub 2} nanowires on Al{sub 2}O{sub 3} (0001) substrates

Abstract

We observed a temperature- and voltage-induced multistep metal-insulator transition (MIT) in vanadium dioxide nanowires fabricated on Al{sub 2}O{sub 3} (0001) substrates. Nanowires with a width of 200 nm showed a multistep MIT that exhibited a resistivity change of nearly two orders of magnitude in a 0.5 K temperature step. These multistep resistivity jumps can be understood as a transition of a single domain, whose size is estimated to be around 50–70 nm from numerical calculation. We found that the temperature-induced isotropic conductive behavior of the nanowires becomes similar to the voltage-induced anisotropic one as their width decreases.

Authors:
; ;  [1]
  1. Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan)
Publication Date:
OSTI Identifier:
22275819
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 104; Journal Issue: 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM OXIDES; METALS; QUANTUM WIRES; VANADIUM OXIDES

Citation Formats

Takami, Hidefumi, Kanki, Teruo, and Tanaka, Hidekazu. Multistep metal insulator transition in VO{sub 2} nanowires on Al{sub 2}O{sub 3} (0001) substrates. United States: N. p., 2014. Web. doi:10.1063/1.4861720.
Takami, Hidefumi, Kanki, Teruo, & Tanaka, Hidekazu. Multistep metal insulator transition in VO{sub 2} nanowires on Al{sub 2}O{sub 3} (0001) substrates. United States. https://doi.org/10.1063/1.4861720
Takami, Hidefumi, Kanki, Teruo, and Tanaka, Hidekazu. 2014. "Multistep metal insulator transition in VO{sub 2} nanowires on Al{sub 2}O{sub 3} (0001) substrates". United States. https://doi.org/10.1063/1.4861720.
@article{osti_22275819,
title = {Multistep metal insulator transition in VO{sub 2} nanowires on Al{sub 2}O{sub 3} (0001) substrates},
author = {Takami, Hidefumi and Kanki, Teruo and Tanaka, Hidekazu},
abstractNote = {We observed a temperature- and voltage-induced multistep metal-insulator transition (MIT) in vanadium dioxide nanowires fabricated on Al{sub 2}O{sub 3} (0001) substrates. Nanowires with a width of 200 nm showed a multistep MIT that exhibited a resistivity change of nearly two orders of magnitude in a 0.5 K temperature step. These multistep resistivity jumps can be understood as a transition of a single domain, whose size is estimated to be around 50–70 nm from numerical calculation. We found that the temperature-induced isotropic conductive behavior of the nanowires becomes similar to the voltage-induced anisotropic one as their width decreases.},
doi = {10.1063/1.4861720},
url = {https://www.osti.gov/biblio/22275819}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 2,
volume = 104,
place = {United States},
year = {Mon Jan 13 00:00:00 EST 2014},
month = {Mon Jan 13 00:00:00 EST 2014}
}