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Title: Unusual thermopower of inhomogeneous graphene grown by chemical vapor deposition

We report on thermopower (TEP) and resistance measurements of inhomogeneous graphene grown by chemical vapor deposition (CVD). Unlike the conventional resistance of pristine graphene, the gate-dependent TEP shows a large electron-hole asymmetry. This can be accounted for by inhomogeneity of the CVD-graphene where individual graphene regions contribute with different TEPs. At the high magnetic field and low temperature, the TEP has large fluctuations near the Dirac point associated with the disorder in the CVD-graphene. TEP measurements reveal additional characteristics of CVD-graphene, which are difficult to obtain from the measurement of resistance alone.
Authors:
 [1] ;  [2] ; ; ;  [3] ; ;  [4] ;  [1]
  1. Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of)
  2. (Sweden)
  3. Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-412 96 Gothenburg (Sweden)
  4. Department of Materials Science and Engineering, Seoul National University, Seoul 151-747 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22275811
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHEMICAL VAPOR DEPOSITION; GRAPHENE; MAGNETIC FIELDS