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Title: Quantum confinement effect in Bi anti-dot thin films with tailored pore wall widths and thicknesses

We investigated quantum confinement effects in Bi anti-dot thin films grown on anodized aluminium oxide templates. The pore wall widths (w{sub Bi}) and thickness (t) of the films were tailored to have values longer or shorter than Fermi wavelength of Bi (λ{sub F} = ∼40 nm). Magnetoresistance measurements revealed a well-defined weak antilocalization effect below 10 K. Coherence lengths (L{sub ϕ}) as functions of temperature were derived from the magnetoresistance vs field curves by assuming the Hikami-Larkin-Nagaoka model. The anti-dot thin film with w{sub Bi} and t smaller than λ{sub F} showed low dimensional electronic behavior at low temperatures where L{sub ϕ}(T) exceed w{sub Bi} or t.
Authors:
 [1] ; ; ;  [1] ;  [2] ;  [3] ;  [4] ;  [3] ;  [5]
  1. Department of Chemistry, The University of Tokyo, Bunkyo, Tokyo 113-0033 (Japan)
  2. (KAST), Kawasaki 213-0012 (Japan)
  3. (Japan)
  4. Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan)
  5. School of Engineering, Brown University, Providence, Rhode Island 02912 (United States)
Publication Date:
OSTI Identifier:
22275805
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM OXIDES; COHERENCE LENGTH; MAGNETORESISTANCE; TEMPERATURE DEPENDENCE; THICKNESS; THIN FILMS; WIDTH