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Title: Low-temperature (180 °C) formation of large-grained Ge (111) thin film on insulator using accelerated metal-induced crystallization

Abstract

The Al-induced crystallization (AIC) yields a large-grained (111)-oriented Ge thin film on an insulator at temperatures as low as 180 °C. We accelerated the AIC of an amorphous Ge layer (50-nm thickness) by initially doping Ge in Al and by facilitating Ge diffusion into Al. The electron backscatter diffraction measurement demonstrated the simultaneous achievement of large grains over 10 μm and a high (111) orientation fraction of 90% in the polycrystalline Ge layer formed at 180 °C. This result opens up the possibility for developing Ge-based electronic and optical devices fabricated on inexpensive flexible substrates.

Authors:
; ;  [1];  [2];  [3]
  1. Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan)
  2. National Institute for Materials Science, Namiki, Tsukuba 305-0044 (Japan)
  3. Materials, Physics and Energy Engineering, Nagoya University, Aichi 464-8603 (Japan)
Publication Date:
OSTI Identifier:
22275802
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 104; Journal Issue: 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTALLIZATION; DIFFRACTION; DIFFUSION; METALS; POLYCRYSTALS; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; THICKNESS; THIN FILMS

Citation Formats

Toko, K., E-mail: toko@bk.tsukuba.ac.jp, Numata, R., Oya, N., Suemasu, T., Fukata, N., and Usami, N. Low-temperature (180 °C) formation of large-grained Ge (111) thin film on insulator using accelerated metal-induced crystallization. United States: N. p., 2014. Web. doi:10.1063/1.4861890.
Toko, K., E-mail: toko@bk.tsukuba.ac.jp, Numata, R., Oya, N., Suemasu, T., Fukata, N., & Usami, N. Low-temperature (180 °C) formation of large-grained Ge (111) thin film on insulator using accelerated metal-induced crystallization. United States. https://doi.org/10.1063/1.4861890
Toko, K., E-mail: toko@bk.tsukuba.ac.jp, Numata, R., Oya, N., Suemasu, T., Fukata, N., and Usami, N. 2014. "Low-temperature (180 °C) formation of large-grained Ge (111) thin film on insulator using accelerated metal-induced crystallization". United States. https://doi.org/10.1063/1.4861890.
@article{osti_22275802,
title = {Low-temperature (180 °C) formation of large-grained Ge (111) thin film on insulator using accelerated metal-induced crystallization},
author = {Toko, K., E-mail: toko@bk.tsukuba.ac.jp and Numata, R. and Oya, N. and Suemasu, T. and Fukata, N. and Usami, N.},
abstractNote = {The Al-induced crystallization (AIC) yields a large-grained (111)-oriented Ge thin film on an insulator at temperatures as low as 180 °C. We accelerated the AIC of an amorphous Ge layer (50-nm thickness) by initially doping Ge in Al and by facilitating Ge diffusion into Al. The electron backscatter diffraction measurement demonstrated the simultaneous achievement of large grains over 10 μm and a high (111) orientation fraction of 90% in the polycrystalline Ge layer formed at 180 °C. This result opens up the possibility for developing Ge-based electronic and optical devices fabricated on inexpensive flexible substrates.},
doi = {10.1063/1.4861890},
url = {https://www.osti.gov/biblio/22275802}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 2,
volume = 104,
place = {United States},
year = {Mon Jan 13 00:00:00 EST 2014},
month = {Mon Jan 13 00:00:00 EST 2014}
}