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Title: Generation and control of spin-polarized photocurrents in GaMnAs heterostructures

Photocurrents are calculated for a specially designed GaMnAs semiconductor heterostructure. The results reveal regions in the infrared range of the energy spectrum, in which the proposed structure is remarkably spin-selective. For such photon energies, the generated photocurrents are strongly spin-polarized. Application of a relatively small static bias in the growth direction of the structure is predicted to efficiently reverse the spin-polarization for some photon energies. This behavior suggests the possibility of conveniently simple switching mechanisms. The physics underlying the results is studied and understood in terms of the spin-dependent properties emerging from the particular potential profile of the structure.
Authors:
; ;  [1] ;  [2] ;  [1] ; ;  [3] ;  [2]
  1. Departamento de Física, Universidade Federal de São Carlos, 13565-905 São Carlos, SP (Brazil)
  2. (Brazil)
  3. Faculdade de Ciências Aplicadas, Universidade Estadual de Campinas, 13484-350 Limeira, SP (Brazil)
Publication Date:
OSTI Identifier:
22275801
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ENERGY SPECTRA; GALLIUM ARSENIDES; MANGANESE ARSENIDES; PHOTOCURRENTS; PHOTONS; SPIN; SPIN ORIENTATION